Boron Nitride Wafers for doping of semiconductors
Release date:
2020-10-20
RFQ ID:
CE-P2581-121
Category:
Components/Parts
Country/Region:
![Russia]()
Russia
Russia
Product Description
Our company JSC would like to purchase yourproduct Boron Nitride Wafers for doping of semiconductors. Our requirements:
Diameter 100 mm
Thickness 0.8 mm
Temperature 800-975 C
Sheet Resistance 2000-20 Ohm/Sq
Boron Glass Thickness 300-2000 A
Please send me the technical information/datasheet for you products BN99
Diameter 100 mm
Thickness 0.8 mm
Temperature 800-975 C
Sheet Resistance 2000-20 Ohm/Sq
Boron Glass Thickness 300-2000 A
Please send me the technical information/datasheet for you products BN99
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