Ningbo Ouxiang Fine Ceramic Technology Co., Ltd.

Uniform Social Credit Code (USCC):91330283730150473U Ningbo, Zhejiang, China http://www.cn-noc.com/
Silicon carbide material
Raw materials
Silicon Carbide (SiC)

Powder preparation
-

Molding
-

Sintering process
-

processing technology
-

Product Features

Product Line

Silicon carbide material

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Product Description

Model
-
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Origin
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Product Details

OS-1: Alpha sintered Sic

Purity>98%,Relative density>96%,High Wear Resistance, High Corrosion Resistance, High Heat Resistance, Produced in the common method of Powder Metallurgy, Best performance as pure chemical compound, Most ideal for mass production on high volume.
Silicon-based ceramics are silicon carbide material containing graphite. Because of the silicon carbide matrix contains many small graphite particle dispersion, the use of matching with other materials, the friction coefficient is very small, has good self-lubricating properties, especially suitable for the production of gas seal or condition of dry friction seals use, so that the service life of seals and improve reliability.

OS-2: Reaction bonded Sic

High Thermal Conductivity, High thermal shock Resistance, Electric discharge processable conductivity.

OS-4: Sintered contain graphite silicon carbide

Silicon-based ceramics are silicon carbide material containing graphite. Because of the silicon carbide matrix contains many small graphite particle dispersion, the use of matching with other materials, the friction coefficient is very small, has good self-lubricating properties, especially suitable for the production of gas seal or condition of dry friction seals use, so that the service life of seals and improve reliability.

OS-5: Porous silicon carbide

The material to maintain a comprehensive anti-corrosion, but also add a unique spherical through improved microporous SiC excellent anti-friction properties. These independent uniform microporous scattered as fluid or lubricant storage body to help promote sliding at the interface of the surface components to maintain fluid film.

Product parameters

 

OS-1 OS-2 OS-4 OS-5

Process

Alpha Sintered 
SiC

Reaction Bonded 
SiC

Sintered Carbide 
Contain Graphite

Porous Silicon 
Carbide

Content (wt%)

SiC≥98%

SIC-12%Si

Gravity

3.12

3.05

3.02

3.04

Hardness

Hs120

Hs110

Hv2400

Hv1700

Hv2250

Hv2400

Bending Strength

490

392

410

260

Flexural Strength (Gpa)

360

350

320

350

Poisson’s Ratio

0.2

0.2

0.21

0.2

Fracture Toughness(MN/M)

2.4

2.8

2.2

2.4

Thermal Conductivity 
(W/m.K)

147

151

135

110

Thermal Expansion Coeff.
(I/℃)

3.5X10-6

3.1X10-6

3.4X10-6

3.6X10-6

 

(RT~400℃)

(RT~400℃)

(RT~400℃)

(RT~400℃)

Heat Resistance  
(in the air)

1600℃ 

1400℃ 

1600℃ 

1600℃ 

Thermal Shock Resistance 
△TMM

200℃ 

250℃ 

200℃ 

200℃ 

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